Session 2A - MOS structures H. Kobayashi, W. B. Kim, T. Matsumoto (invited lecture) Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method M. Wuilpart, K. Yuksel, P. Megret (invited lecture) Optical reflectometry in the frequency domain for the interrogation of fibre Bragg gratings P. Bury, I. Bellan Calculation of tunneling transport to acoustic evaluation of interface state in ultrathin MOS structures A. Chvala, D. Donoval, J. Marek, P. Pribytny, M. Molnar Characterisation of thermal equivalent circuit for SPICE-like electro-thermal model of power MOSFET J. Marek, D. Donoval, A. Chvala, P. Pribitny, M. Molnar Analysis of a low voltage vertical power MOS transistor failure during UIS test supported by 2-D and 3-D simulations M. Nemec, P. Benko, M. Neupauer, K. Cico, L. Harmatha, K. Frohlich Preparation and characterization of thin ZrO2 layers for gate insulation in mosfet M. Ziska, L. Harmatha, M. Nemec, I. Benkovsky Influence of electron irradiation on MOS structure with CZ and NCZ silicon substrate